phase control thyristor preliminary information features double side cooling high surge capability applications high power drives high voltage power supplies static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions t vj = -40c to 125c, i drm = i rrm = 50ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr960g26 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 2600v i t(av) 960a i tsm 13000a dv/dt* 1500v/s di/dt 500a/s * higher dv/dt selections available outline type code: g (see package details for further information) fig. 1 package outline dcr960g26 high power semiconductor devices dcr960g28 dcr960g26 dcr960g24 2800 2600 2400
current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on-state current half wave resistive load 965 a i t(rms) rms value - 1516 a i t continuous (direct) on-state current - 1420 a surge ratings symbol parameter test conditions max. units i tsm surge (non-repetitive) on-state current 10ms half si ne, t case = 125c 13.0 ka i 2 t i 2 t for fusing v r = 0 0.845 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j-c) thermal resistance ? junction to case double side co oled dc - 0.0268 c/w single side cooled anode dc - 0.0527 c/w cathode dc - 0.0652 c/w r th(c-h) thermal resistance ? case to heatsink clamping force 11.5kn double side - 0.0072 c/w (with mounting compound) single side - .0144 c/w t vj virtual junction temperature on-state (conducting) - 1 35 c reverse (blocking) - 125 c t stg storage temperature range -55 125 c f m clamping force 10 13 kn dcr960g26
dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125c - 50 ma dv/dt max. linear rate of rise of off-state voltage t o 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on-state current from 67% v drm to 2x i t(av) repetitive 50hz - 250 a/s gate source 30v, 10 , non-repetitive - 500 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage ? low level 100a to 500a at t case = 125c - 0.8 v threshold voltage ? high level 500a to 3000a at t case = 125c - 0.95 v r t on-state slope resistance ? low level 100a to 500a a t t case = 125c - 0.7556 m on-state slope resistance ? high level 500a to 3000a at t case = 125c - 0.51 m t gd delay time v d = 67% v drm , gate source 30v, 10 tbd tbd s t r = 0.5s, t j = 25c t q turn-off time t j = 125c, v r = 200v, di/dt = 5a/s, 150 350 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt = 5a/s, 700 1500 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g-k = , i tm = 500a, i t = 5a - 300 ma dcr960g26
gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non-trigger voltage at v drm, t case = 125c tbd v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non-trigger current v drm = 5v, t case = 25c tbd ma curves 0 1000 2000 3000 0.5 1.0 1.5 2.0 2.5 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) 25c min 25c max 125c min 125c max fig.2 maximum & minimum on-state characteristics v tm equation where a = 0.404415 b = 0.080354 v tm = a + bln (i t ) + c.i t +d. i t c = 0.000415 d = 0.003401 these values are valid for t j = 125c for i t 50a to 3000a dcr960g26
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 500 1000 1500 2000 2500 3000 3500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 fig.3 on-state power dissipation ? sine wave fig.4 maximum permissible case temperature, double side cooled ? sine wave 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30 fig.5 maximum permissible heatsink temperature, double side cooled ? sine wave fig.6 on-state power dissipation ? rectangular wave dcr960g26
0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 fig.7 maximum permissible case temperature, double side cooled ? rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled ? rectangular wave 0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10 100 time ( s ) themal impedance z th(j-c) ( c/kw ) double side cooled anode cooled cathode cooled 1 2 3 4 double side cooled r i (c/kw) 2.2995 5.4226 16.9074 2.1488 t i (s) 0.0066401 0.0457025 0.4962482 1.8248 anode side cooled r i (c/kw) 2.3214 5.2661 10.2686 34.8031 t i (s) 0.0066948 0.045528 0.3484209 4.582 cathode side cooled r i (c/kw) 2.4895 5.9105 7.4256 49.3432 t i (s) 0.0070404 0.052895 0.3933903 4.2295 z th = [r i x ( 1-exp. (t/t i ))] [1] r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling z th (z) z th (z) z th (z) sine. rect. sine. rect. sine. rect. 180 4.15 2.72 180 4.15 2.72 180 4.13 2.71 120 4.90 4.02 120 4.89 4.02 120 4.87 4.00 90 5.74 4.79 90 5.73 4.78 90 5.69 4.76 60 6.53 5.65 60 6.52 5.65 60 6.46 5.60 30 7.16 6.64 30 7.15 6.62 30 7.07 6.56 15 7.46 7.18 15 7.44 7.16 15 7.36 7.09 fig.9 maximum (limit) transient thermal impedance ? junction to case (c/kw) dcr960g26
5 10 15 1 10 100 number of cycles surge current, i tsm - (ka) conditions: tcase = 125c v r =0 pulse width = 10ms 0 10 20 30 40 1 10 100 pulse width, t p - (ms) surge current, i tsm - (ka) 0 1 2 i 2 t (ma 2 s) i 2 t i tsm conditions: t case = 125c v r = 0 half-sine w ave fig.10 multi-cycle surge current fig.11 single-cycle surge current dcr960g26
0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger current i gt , - (a) gate trigger voltage, v gt - (v) tj = 125 o c tj = 25 o c tj = -40 o c preferred gate drive area upper limit lower limit fig12 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c fig. 13 gate characteristics 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts) dcr960g26
package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. ? 1 . 5 ?57.0 max ?33.95 nom ?33.95 nom hole ?3.60 x 2.00 deep (in both electrodes) 3rd angle projection do not scale if in doubt ask cathode gate anode for package height see table 20 offset (nom.) to gate tube device maximum thickness (mm) minimum thickness (mm) dcr803sg18 26.415 25.865 DCR806SG28 26.49 25.94 dcr818sg48 26.84 26.17 dcr820sg65 27.1 26.55 dcr1080g22 26.415 25.865 dcr960g26 26.49 25.94 dcr780g42 26.72 26.17 dcr690g52 26.84 26.29 dcr590g65 27.1 26.55 dcr470g85 27.46 26.91 clamping force: 11.5 kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: g fig.14 package outline dcr960g26
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